收藏本站
SiZ710DT
Vishay Siliconix
N-Channel 20 V (D-S) MOSFETs
FEATURES
PRODUCT SUMMARY
? Halogen-free According to IEC 61249-2-21
Channel-1
Channel-2
V DS (V)
20
20
R DS(on) ( ? )
0.0068 at V GS = 10 V
0.0090 at V GS = 4.5 V
0.0033 at V GS = 10 V
0.0043 at V GS = 4.5 V
I D (A)
16 a
16 a
35 a
35 a
Q g (Typ.)
6.9 nC
18.2 nC
Definition
? TrenchFET ? Power MOSFETs
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Notebook System Power
PowerPAIR ? 6 x 3.7
? POL
? Synchronous Buck Converter
Pin 1
1
G 1
D 1
3.73 mm
D 1
D 1
2
3
D 1
G 1
6
G 2
S 2
5
S 1 /D 2
(Pin 7)
S 2
6 mm
N-Channel 1
MOSFET
S 1 /D 2
4
G 2
Orderin g Information:
SiZ710DT-T1-GE3 (Lead (P b )-free and Halogen-free)
N-Channel 2
MOSFET
S 2
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
16
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
V DS
V GS
a
20
± 20
35
a
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
16 a
16 a, b, c
35 a
30 b, c
Pulsed Drain Current
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
15 b, c
70
16 a
3.2 b, c
20
20
24 b, c
100
35 a
3.8 b, c
30
45
A
mJ
T C = 25 °C
27
48
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
17
3.9 b, c
31
4.6 b, c
W
T A = 70 °C
2.5 b, c
3 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, f t ? 10 s
Maximum Junction-to-Case (Drain) Steady State
R thJA
R thJC
24 32 20 27
3.5 4.6 2 2.6
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile ( www.vishay.com/doc?73257 ). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 65733
S11-2379-Rev. B, 28-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SIZ720DT-T1-GE3 MOSFET N-CH D-S 20V POWERPAIR
SIZ902DT-T1-GE3 MOSFET N-CH 30V DUAL D-S
SKY12322-86LF-EVB BOARD EVALUATION FOR SKY12322-86
SKY12323-303LF-EVB BOARD EVALUATION FOR SKY1232-303
SKY12324-73LF-EVB BOARD EVALUATION FOR SKY12324-73
SKY12325-350LF-EVB BOARD EVAL FOR SKY12325-350
SKY12328-350LF-EVB BOARD EVAL FOR SKY12328-350
SKY12339-350LF-EVB BOARD EVAL FOR SKY12339-350
相关代理商/技术参数
SIZ720DT-T1-GE3 功能描述:MOSFET N-CH D-S 20V POWERPAIR RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR
SIZ728DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 25 V (D-S) MOSFETs
SIZ728DT-T1-GE3 功能描述:MOSFET 25V 16A / 35A N-Ch MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ730DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SIZ730DT_12 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30 V (D-S) MOSFETs
SiZ730DT-T1-GE3 功能描述:MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIZ790DT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode